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December 2013
FCD7N60
N-Channel SuperFET ? MOSFET
600 V, 7 A, 600 m Ω
Features
? 650 V @ T J = 150°C
? Typ. R DS(on) = 530 m Ω
? Ultra Low Gate Charge (Typ. Q g = 23 nC)
? Low Effective Output Capacitance (Typ. C oss(eff.) = 60 pF)
? 100% Avalanche Tested
? RoHS Compliant
Application
Description
SuperFET ? MOSFET is Fairchild Semiconductor ’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
? LCD / LED TV and Monitor
? Lighting
? Solar Inverter
? AC-DC Power Supply
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C = 25
o
C unless otherwise noted.
Symbol
Parameter
FCD7N60TM /
FCD7N60TM_WS
Unit
V DSS
I D
Drain to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
600
7
4.4
V
A
I DM
V GSS
Drain Current
Gate to Source Voltage
- Pulsed
(Note 1)
21
±30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
230
7
8.3
20
83
0.67
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FCD7N60TM /
FCD7N60TM_WS
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1.5
83
o
C/W
?2008 Fairchild Semiconductor Corporation
FCD7N60 Rev. C1
1
www.fairchildsemi.com
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